IS42LS16800A ICSI [Integrated Circuit Solution Inc], IS42LS16800A Datasheet - Page 24

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IS42LS16800A

Manufacturer Part Number
IS42LS16800A
Description
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
FUNCTIONAL DESCRIPTION
The 128Mb SDRAMs are quad-bank DRAMs which operate
at 2.5V or 3.3V and include a synchronous interface (all
signals are registered on the positive edge of the clock
signal, CLK). Each of the 16,777,216-bit banks is organized
as 4,096 rows by 256 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of an AC-
TIVE command which is then followed by a READ or WRITE
command. The address bits registered coincident with the
ACTIVE command are used to select the bank and row to
be accessed (BA0 and BA1 select the bank, A0-A11 select the row).
The address bits (A0-A7) registered coincident with the READ
or WRITE command are used to select the starting column
location for the burst access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information covering
device initialization, register definition, command
descriptions and device operation.
24
Integrated Silicon Solution, Inc. — www.issi.com —
Initialization
SDRAMs must be powered up and initialized in a
predefined manner.
The 128M SDRAM is initialized after the power is applied to
V
A 200µs delay is required prior to issuing any command
other than a COMMAND INHIBIT or a NOP. The COMMAND
INHIBIT or NOP may be applied during the 100us period and
should continue at least through the end of the period.
With at least one COMMAND INHIBIT or NOP command
having been applied, a PRECHARGE command should be
applied once the 100µs delay has been satisfied. All banks
must be precharged. This will leave all banks in an idle state
where two AUTO REFRESH cycles must be performed. After
the AUTO REFRESH cycles are complete, the SRDRAM is then
ready for mode register programming.
The mode register and extended mode registers should be
loaded prior to applying any operational command because
it will power up in an unknown state.
DD
and Vddq (simultaneously) and the clock is stable.
ADVANCED INFORMATION Rev. 00A
ISSI
1-800-379-4774
06/01/02
®

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