CY8C20111_12 CYPRESS [Cypress Semiconductor], CY8C20111_12 Datasheet - Page 30
CY8C20111_12
Manufacturer Part Number
CY8C20111_12
Description
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
1.CY8C20111_12.pdf
(44 pages)
- Current page: 30 of 44
- Download datasheet (2Mb)
Absolute Maximum Ratings
Operating Temperature
Document Number: 001-53516 Rev. *H
T
T
t
T
V
V
V
I
ESD
LU
T
T
BAKETIME
MIO
A
A
STG
BAKETEMP
J
DD
IO
IOZ
Parameter
Parameter
Storage temperature
Bake Temperature
Bake Time
Ambient temperature with power
applied
Supply voltage on V
V
DC input voltage
DC voltage applied to tri-state
Maximum current into any GPIO
pin
Electro static discharge voltage
Latch up current
Ambient temperature
Junction temperature
SS
Description
Description
DD
relative to
V
V
package
SS
SS
2000
label
–0.5
Min
See
Min
–40
–55
–40
–25
–40
–
–
– 0.5
– 0.5
Typ
125
Typ
25
–
–
–
–
–
–
–
–
–
–
V
V
Package
DD
DD
+100
+100
label
+6.0
Max
Max
See
+85
+50
+85
200
72
–
+ 0.5
+ 0.5
Hours
Unit
Unit
mA
mA
°C
°C
°C
°C
°C
V
V
V
V
CY8C20111, CY8C20121
Higher
reduce
Recommended
temperature is +25 °C ± 25 °C (0 °C
to 50 °C). Extended duration
storage temperatures above 65 °C
degrade reliability
Human body model ESD
data
storage
Notes
Notes
retention
Page 30 of 44
temperatures
storage
time.
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