TDA8003TS/C1 PHILIPS [NXP Semiconductors], TDA8003TS/C1 Datasheet - Page 16
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TDA8003TS/C1
Manufacturer Part Number
TDA8003TS/C1
Description
I2C-bus SIM card interface
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
1.TDA8003TSC1.pdf
(24 pages)
Philips Semiconductors
2000 Apr 20
SYMBOL
Pin V
V
I
SR
Pin I/O
V
I
V
V
V
V
I
I
t
t
t
R
Pin SIMI/O
V
V
V
V
I
O
O
LIH
IL
t(DI)
t(DO)
d
LIH
I
O
O
OL
OH
IL
IH
OL
OH
IL
IH
pu(int)
I
CC
2
C-bus SIM card interface
CC
output voltage
output current
output current
slew rate on V
output voltage
output current
LOW-level output voltage
HIGH-level output voltage
LOW-level input voltage
HIGH-level input voltage
HIGH-level input leakage
current
LOW-level input current
data input transition time
data output transition time
delay time on falling edge
internal pull-up resistance
between pins I/O and V
LOW-level output voltage
HIGH-level output voltage
LOW-level input voltage
HIGH-level input voltage
HIGH-level input leakage
current
PARAMETER
CC
(rise and fall) C
CC
inactive mode; I
active mode; 5 V card; no load
active mode; 3 V card; no load
active mode; with 200 nF capacitor;
including static load (up to 20 mA)
and dynamic current pulses;
I
duration <400 ns
inactive mode; pin V
to ground
V
V
V
inactive mode; I
inactive mode; pin I/O short circuit
to ground
I
+25 < I
C
C
C1 version
C2 version
I
with internal 20 k pull-up resistor
to V
max
OL
OL
CC
CC
CC
L(max)
L
L
5 V card; 40 nAs pulses
3 V card; 24 nAs pulses
= 30 pF
= 30 pF
= 1 mA
= 1 mA
DDI
= 200 mA, f
= 5 or 3 V; V
= 5 or 3 V; V
short circuit to ground
; I
OH
= 300 nF
O
< 25 A
CONDITIONS
= 10 A
16
O
O
max
DD
DD
= 1 mA
= 1 mA
= 5 MHz;
CC
= 2.5 V
= 5.5 V
short circuit
4.85
2.8
4.60
2.75
0.05
0.8V
1.5
8
13
V
0.7V
0.2
0.3
0.2
0.3
DDI
MIN.
CC
DDI
0.3
5.10
3.05
0.17
TYP.
TDA8003TS
Product specification
0.4
5.40
3.22
5.40
3.22
15
40
120
0.25
0.4
+0.4
V
+0.8
V
10
1
0.5
500
13
18
+0.3
V
+0.3V
V
10
1
1
600
CC
CC
DDI
DDI
MAX.
+ 0.2 V
+ 0.3 V
+ 0.2 V
+ 0.3 V
DDI
UNIT
V
V
V
V
V
mA
mA
mA
mA
V/ s
V
mA
V
V
ns
k
k
V
V
A
A
s
s
A