M48T512Y-85PM1 STMICROELECTRONICS [STMicroelectronics], M48T512Y-85PM1 Datasheet - Page 14

• Manufacturer Part Number: M48T512Y-85PM1
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Clock operations
3.5
Caution:
14/23
V
I
fluctuations, resulting in spikes on the V
is recommended to filter these spikes.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 9.
Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 5747 Rev 6
0.1µF
CC
CC
that drive it to values below V
bus. A ceramic bypass capacitor value of 0.1 µF
CC
, anode to V
V CC
V SS
DEVICE
SS
). (Schottky diode 1N5817
M48T512Y, M48T512V
SS
by as much as
AI02169