AP4953GM_08 A-POWER [Advanced Power Electronics Corp.], AP4953GM_08 Datasheet - Page 4

• Manufacturer Part Number: AP4953GM_08
• Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

AP4953GM
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
90%
T
10%
V
V
A
=25
DS
GS
-V
o
DS
4
C
Q
, Drain-to-Source Voltage (V)
t
G
d(on)
, Total Gate Charge (nC)
1
V
I
DS
t
8
D
r
= -5A
= -15V
12
10
t
d(off)
16
t
f
100us
1ms
10ms
100ms
1s
DC
100
20
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.02
0.05
Duty Factor = 0.5
0.01
V
0.1
0.2
Single Pulse
0.001
G
5
-V
Q
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
Q
13
Charge
G
GD
17
1
P
DM
Duty Factor = t/T
Peak T
R
thja
10
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
C
C
C
Q
a
iss
rss
oss
1000
29
4