AP4953GM_08 A-POWER [Advanced Power Electronics Corp.], AP4953GM_08 Datasheet - Page 3

• Manufacturer Part Number: AP4953GM_08
• Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

8.00
6.00
4.00
2.00
0.00
40
30
20
10
0
70
60
50
40
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
=25
0.2
-V
1
o
-V
Reverse Diode
C
DS
-V
SD
4
GS
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
2
T
j
=150
0.6
o
3
6
C
I
T
D
0.8
A
=-4A
=25
4
℃
1
T
V
8
j
=25
G
= -3.0V
5
-7.0V
-5.0V
-4.5V
1.2
-10V
o
C
1.4
6
10
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
1.6
1.4
1.2
0.8
0.6
0.4
1
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
V
=150
I
G
D
=-10V
=-5A
v.s. Junction Temperature
Junction Temperature
-V
o
C
T
T
DS
2
j
0
j
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
4
50
50
AP4953GM
V
100
6
100
o
o
G
C)
C)
= - 3.0 V
-4.5V
-7.0V
-5.0V
-10V
150
8
150
3