AP4503AGM A-POWER [Advanced Power Electronics Corp.], AP4503AGM Datasheet - Page 6

• Manufacturer Part Number: AP4503AGM
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

P-Channel
AP4503AGM
40
30
20
10
50
40
30
20
0
10
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
2
0
0
Fig 5. Forward Characteristic of
0.2
1
-V
Reverse Diode
-V
-V
GS
4
DS
SD
T
, Gate-to-Source Voltage (V)
0.4
j
, Drain-to-Source Voltage (V)
=150
, Source-to-Drain Voltage (V)
2
o
0.6
C
T
A
3
6
=25
T
I
0.8
o
A
D
C
=25
= -4 A
4
T
o
C
j
=25
1
8
V
o
G
C
= - 3 .0V
5
1.2
- 7.0V
- 5.0V
- 4.5V
- 10V
1.4
6
10
1.6
1.4
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
30
A
I
G
= 150
D
= - 10V
= -6 A
1
v.s. Junction Temperature
Junction Temperature
-V
o
C
T
DS
0
0
T
j
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
-30
50
3
50
4
100
100
o
V
C)
o
G
C)
= - 3 .0V
5
- 7.0V
- 5.0V
- 4.5V
- 10V
150
6
150
6