AP4503AGM A-POWER [Advanced Power Electronics Corp.], AP4503AGM Datasheet - Page 2

• Manufacturer Part Number: AP4503AGM
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
AP4503AGM
N-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
=25
=70
o
o
C)
C)
j
2
=25
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
o
D
D
S
S
C(unless otherwise specified)
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=1.7A, V
=6A,
=6A
=1A
=3.3Ω,V
=20Ω
=V
=10V, I
=30V, V
=24V ,V
=24V
=20V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
GS
V
, I
GS
Test Conditions
Test Conditions
D
GS
D
=250uA
D
D
=0
D
=250uA
GS
GS
GS
=6A
=6A
=4A
=0V
=10V
V
=0V
=0V
,
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
18.5
Typ.
485
8.4
1.4
4.7
80
75
19
11
6
5
8
9
-
-
-
-
-
-
-
-
Max.
±100
Max.
13.5
770
1.2
28
42
25
3
1
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mΩ
mΩ
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
nC
V
V
S
V
2