M29W800DT NUMONYX [Numonyx B.V], M29W800DT Datasheet - Page 22

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M29W800DT

Manufacturer Part Number
M29W800DT
Description
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet

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Command interface
Table 5.
1. X don’t care, PA program address, PD program data, BA any address in the block.
Table 6.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
22/52
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
Chip erase
Block erase (64 Kbytes)
Erase suspend latency time
Program (byte or word)
Chip program (byte by byte)
Chip program (word by word)
Program/erase cycles (per block)
Data retention
All values in the table are in hexadecimal.
The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15
are don’t care. DQ15A–1 is A–1 when BYTE is V
Command
Commands, 8-bit mode, BYTE = V
Program, erase times and program, erase endurance cycles
Parameter
6+ AAA
1
3
3
4
3
2
2
6
1
1
1
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
X
X
1st
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
555
555
555
555
555
555
PA
X
IL
or DQ15 when BYTE is V
2nd
PD
55
55
00
55
55
55
55
IL
(1)
AAA
AAA
AAA
AAA
AAA
X
Bus write operations
100,000
3rd
Min.
20
A0
F0
90
20
80
80
IH
.
CC
CC
AAA
AAA
PA
.
after 100,000 program/erase cycles.
4th
Typ.
0.8
10
12
12
15
PD
AA
AA
6
(1)(2)
M29W800DT, M29W800DB
555
555
5th
Max.
200
60
25
60
30
6
(4)
55
55
(3)
(3)
(3)
(4)
(3)
(2)
AAA
BA
cycles
years
6th
Unit
µs
µs
s
s
s
s
10
30

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