MT4LC1M16E5 MICRON [Micron Technology], MT4LC1M16E5 Datasheet - Page 3

• Manufacturer Part Number: MT4LC1M16E5
• Description: EDO DRAM
• Manufacturer: MICRON [Micron Technology]

PAGE ACCESS
WRITE or READ-MODIFY-WRITE) within a row-
address-defined page boundary. The page cycle is al-
ways initiated with a row address strobed in by RAS#,
followed by a column address strobed in by CAS#. Ad-
ditional columns may be accessed by providing valid
column addresses, strobing CAS# and holding RAS#
LOW, thus executing faster memory cycles. Returning
RAS# HIGH terminates the page mode of operation,
i.e., closes the page.
EDO PAGE MODE
an accelerated FAST-PAGE-MODE cycle. The primary
advantage of EDO is the availability of data-out even
after CAS# returns HIGH. EDO provides for CAS#
precharge time (
going invalid. This elimination of CAS# output control
provides for pipelined READs.
turned the output buffers off (High-Z) with the rising
edge of CAS#. EDO-PAGE-MODE DRAMs operate like
FAST-PAGE-MODE DRAMs, except data will remain
valid or become valid after CAS# goes HIGH during
READs, provided RAS# and OE# are held LOW. If OE# is
pulsed while RAS# and CAS# are LOW, data will toggle
from valid data to High-Z and back to the same valid
data. If OE# is toggled or pulsed after CAS# goes HIGH
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
CASL#/CASH#
Page operations allow faster data operations (READ,
The 1 Meg x 16 provides EDO PAGE MODE, which is
FAST-PAGE-MODE DRAMs have traditionally
ADDR
RAS#
WE#
OE#
DQ
V
V
V
V
IOH
IOL
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
ROW
t
CP) to occur without the output data
OPEN
COLUMN (A)
VALID DATA (A)
The DQs go to High-Z if WE# falls, and if
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
WE# Control of DQs
t WHZ
t WPZ
Figure 2
3
while RAS# remains LOW, data will transition to and
remain High-Z (refer to Figure 1). WE# can also perform
the function of disabling the output drivers under cer-
tain conditions, as shown in Figure 2.
OR’d, OE# must be used to disable idle banks of DRAMs.
Alternatively, pulsing WE# to the idle banks during
CAS# HIGH time will also High-Z the outputs. Inde-
pendent of OE# control, the outputs will disable after
t
or CAS#, whichever occurs last.
BYTE ACCESS CYCLE
by the use of CASL# and CASH#. Enabling CASL# se-
lects a lower BYTE access (DQ0-DQ7). Enabling CASH#
selects an upper BYTE access (DQ8-DQ15). Enabling
both CASL# and CASH# selects a WORD WRITE cycle.
DRAMs that have common input controls, with the ex-
ception of the CAS# inputs. Figure 3 illustrates the BYTE
WRITE and WORD WRITE cycles.
mode of operation if both bytes are active. A CAS#
precharge must be satisfied prior to changing modes of
operation between the upper and lower bytes. For ex-
ample, an EARLY WRITE on one byte and a LATE WRITE
on the other byte are not allowed during the same cycle.
OFF, which is referenced from the rising edge of RAS#
COLUMN (B)
During an application, if the DQ outputs are wire
The BYTE WRITEs and BYTE READs are determined
The 1 Meg x 16 may be viewed as two 1 Meg x 8
Additionally, both bytes must always be of the same
t
WPZ is met,
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID DATA (B)
WE# may be used to disable the DQs to prepare
for input data in an EARLY WRITE cycle. The DQs
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
t
16Mb: 1 MEG x16
WHZ
COLUMN (C)
INPUT DATA (C)
EDO DRAM
©2001, Micron Technology, Inc
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UNDEFINED
COLUMN (D)