MT48H16M16LF MICRON [Micron Technology], MT48H16M16LF Datasheet - Page 64

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MT48H16M16LF

Manufacturer Part Number
MT48H16M16LF
Description
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet

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Figure 45:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
COMMAND
BA0, BA1
ADDR
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, BL = 4, and the WRITE burst is followed by a manual PRECHARGE.
2. 15ns is required between <D
DISABLE AUTO PRECHARGE
quency.
t CMS
t CL
t DS
COLUMN m
WRITE
T2
BANK
D
IN
t CMH
t CH
m
t DH
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
D
T4
IN
NOP
m + 2
t DH
64
IN
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
T6
NOP
2
SINGLE BANK
PRECHARGE
ALL BANKS
BANK
T7
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RP
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE

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