IDT7130 Integrated Device Technology, IDT7130 Datasheet - Page 8

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IDT7130

Manufacturer Part Number
IDT7130
Description
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
Manufacturer
Integrated Device Technology
Datasheet

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IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
TIMING WAVEFORM OF WRITE CYCLE NO. 1, (R/
NOTES:
1. R/
2. A write occurs during the overlap (t
3. t
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the
6. Timing depends on which enable signal (
7. This parameter is determined be device characterization, but is not production tested. Transition is measured +/- 500mV from steady state
8. If
TIMING WAVEFORM OF WRITE CYCLE NO. 2, (
ADDRESS
ADDRESS
DATA
with the Output Test Load (Figure 2).
and data to be placed on the bus for the required t
the write pulse can be as short as the specified t
WR
DATA
DATA
OE
W
is measured from the earlier of
or
CE
R/
R/
is low during a R/
OUT
OE
CE
CE
CE
W
IN
W
IN
Low transition occurs simultaneously with or after the R/
must be High during all address transitions.
W
controlled write cycle, the write pulse width must be the larger of t
t
AS
t
(6)
AS
EW
CE
(6)
or t
(4)
or R/
CE
WP
) of
W
or R/
going High to the end of the write cycle.
WP
CE
W
DW
.
) is asserted last.
t
=
WZ
. If
V
IL
(7)
OE
t
and R/
AW
is High during a R/
t
AW
W
t
W
WC
=
t
Low transition, the outputs remain in the High-impedance state.
t
WP (2)
V
WC
IL.
6.01
t
CE
CE
CE
CE
CE
EW
W
W
W
W
W
(2)
CONTROLLED TIMING)
W
CONTROLLED TIMING)
t
DW
controlled write cycle, this requirement does not apply and
t
DW
MILITARY AND COMMERCIAL TEMPERATURE RANGES
WP
or (t
WZ
t
+ t
WR
DW
(3)
t
) to allow the I/O drivers to turn off
WR
t
DH
(3)
t
OW
(1,5)
t
(1,5,8)
DH
t
HZ
t
(7)
HZ
(4)
(7)
2689 drw 10
2689 drw 11
8

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