bfg198 NXP Semiconductors, bfg198 Datasheet - Page 7

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bfg198

Manufacturer Part Number
bfg198
Description
Npn 8 Ghz Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
d im
(dB)
I
Fig.8
V
f
G UM
C
(p+q)
(dB)
Fig.10 Intermodulation distortion as a function of
CE
= 50 mA; V
= 8 V; V
45
50
55
60
65
70
40
30
20
10
= 793.25 MHz.
0
20
10
Maximum gain as a function of frequency.
collector current.
o
CE
= 700 mV; T
= 8 V; T
40
10
amb
amb
2
60
= 25 C;
= 25 C;
80
10
3
f (MHz)
100
I
C
MBB266
MBB753
(mA)
120
10
4
7
handbook, halfpage
handbook, halfpage
(dB)
(dB)
d im
V
f
d 2
V
f
(p+q r)
(p+q)
Fig.11 Second order intermodulation distortion as
CE
CE
Fig.9
= 8 V; V
= 8 V; V
45
50
55
60
65
70
35
40
45
50
55
60
= 450 MHz.
= 443.25 MHz.
20
20
a function of collector current.
Intermodulation distortion as a function of
collector current.
o
o
= 750 mV; T
= 50 dBmV; T
40
40
amb
60
60
amb
= 25 C;
= 25 C
80
80
Product specification
100
100
I
I
BFG198
C
C
MBB498
MBB497
(mA)
(mA)
120
120

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