bfg198 NXP Semiconductors, bfg198 Datasheet - Page 2

• Manufacturer Part Number: bfg198
• Description: Npn 8 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
1995 Sep 12
V
V
I
P
h
f
G
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
stg
j
CBO
CEO
tot
o
CBO
CEO
EBO
tot
NPN 8 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
1
2
3
4
open emitter
open base
up to T
I
I
T
I
T
I
T
d
R
f
open emitter
open base
open collector
up to T
C
C
C
C
(p+q r)
PIN
im
amb
amb
amb
L
= 50 mA; V
= 50 mA; V
= 50 mA; V
= 50 mA; V
= 75 ; T
= 60 dB; I
= 25 C
= 25 C
= 25 C
= 793.25 MHz
s
s
emitter
base
emitter
collector
= 135 C (note 1)
= 135 C (note 1)
CONDITIONS
amb
CE
CE
CE
CE
DESCRIPTION
C
= 70 mA; V
= 25 C;
= 5 V; T
= 8 V; f = 1 GHz;
= 8 V; f = 500 MHz;
= 8 V; f = 800 MHz;
CONDITIONS
2
j
= 25 C
CE
= 8 V;
age
40
MIN.
Top view
90
8
18
15
700
Fig.1 SOT223.
65
MIN.
1
TYP.
Product specification
20
10
2.5
100
1
+150
175
20
10
100
1
MAX.
MAX.
2
BFG198
4
MSB002 - 1
V
V
V
mA
W
V
V
mA
W
GHz
dB
dB
mV
C
C
3
UNIT
UNIT