bfg198 NXP Semiconductors, bfg198 Datasheet

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bfg198

Manufacturer Part Number
bfg198
Description
Npn 8 Ghz Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
File under Discrete Semiconductors, SC14
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 12

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bfg198 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 ...

Page 2

... amb f = 793.25 MHz (p+q r) CONDITIONS open emitter open base open collector 135 C (note Product specification BFG198 4 age Top view MSB002 - 1 Fig.1 SOT223. MIN. TYP. MAX. UNIT 100 ...

Page 3

... Product specification CONDITIONS 135 C (note 1) s MIN. TYP 1 750 700 log ------------------------------------------------------------ dB – amb = 25 C; amb BFG198 VALUE UNIT 40 K/W MAX. UNIT 100 GHz – ...

Page 4

... H 3122 108 20153 2322 180 73103 2322 180 73221 2322 180 73309 = 2.2); r BFG198 ...

Page 5

... Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board. 1995 Sep mounting screws M 2.5 (8x) 5 Product specification output C8 MEA968 60 mm MEA966 60 mm MEA967 BFG198 ...

Page 6

... V ( GHz Fig.7 6 Product specification (mA current gain as a function of collector current (mA amb Transition frequency as a function of collector current. BFG198 MBB267 120 MBB499 120 ...

Page 7

... 750 mV amb = 443.25 MHz. Intermodulation distortion as a function of collector current dBmV amb = 450 MHz. a function of collector current. BFG198 MBB498 100 120 I (mA) C MBB497 100 120 I (mA) C ...

Page 8

... Philips Semiconductors NPN 8 GHz wideband transistor 35 handbook, halfpage d 2 (dB dBmV amb f = 810 MHz. (p+q) Fig.12 Second order intermodulation distortion as a function of collector current. 1995 Sep 12 MBB268 80 100 120 I (mA Product specification BFG198 ...

Page 9

... Fig.14 Common emitter forward transmission coefficient (S 1995 Sep GHz MHz 120 o 150 o 40 MHz 100 GHz 150 o 120 Product specification 100 250 100 250 250 100 MBB494 ). MBB496 ). 21 BFG198 ...

Page 10

... Fig.16 Common emitter output reflection coefficient (S 1995 Sep 120 o 150 o 0.2 0.16 0.12 0.08 0.04 40 MHz 150 o 120 GHz Product specification 2 GHz MBB495 ). 12 100 250 100 250 250 40 MHz 100 MBB493 ). 22 BFG198 ...

Page 11

... Philips Semiconductors NPN 8 GHz wideband transistor PACKAGE OUTLINE handbook, full pagewidth o 16 max 1.80 max Dimensions in mm. 1995 Sep 12 S seating plane 0.32 6.7 0.24 6.3 3.1 2.9 0.10 0. 0.80 2.3 max 0.60 4.6 Fig.17 SOT223. 11 Product specification 0.95 0. 3.7 7.3 3.3 6 (4x) MSA035 - 1 BFG198 ...

Page 12

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 12 Product specification BFG198 ...

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