NTD50N03R-1 ONSEMI [ON Semiconductor], NTD50N03R-1 Datasheet - Page 2

• Manufacturer Part Number: NTD50N03R-1
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

3. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 4)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Temperature Coefficient
Parameter
Parameter
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
Q
(BR)DSS
GS(TH)
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
Q
DS(on)
C
C
g
GSS
G(TH)
G(TH)
DSS
oss
FS
rss
GS
GD
GS
GD
iss
/T
/T
http://onsemi.com
J
J
NTD50N03R
V
V
V
V
V
V
V
V
GS
V
V
GS
V
GS
GS
DS
GS
DS
GS
V
GS
GS
GS
DS
2
= 11.5 V
= 4.5 V
= 11.5 V, V
= 20 V
= 10 V
Test Condition
= 0 V,
= 0 V, V
= 4.5 V, V
= V
= 0 V, f = 1.0 MHz,
= 0 V, I
= 15 V, I
V
I
I
DS
D
D
DS
= 30 A
= 30 A
, I
= 12 V
GS
D
D
D
DS
= 250 mA
T
= 250 mA
DS
T
= "20 V
I
I
I
I
I
J
= 15 A
D
D
D
D
D
J
= 15 V,
= 125°C
= 15 V,
= 25°C
= 30 A
= 15 A
= 30 A
= 30 A
= 15 A
Symbol
R
R
R
qJC
qJA
qJA
Min
1.0
25
−5.0
12.5
11.7
Typ
−16
610
300
125
1.7
6.0
0.9
1.9
3.7
1.0
1.9
3.9
12
21
19
15
15
Value
71.4
100
3.0
"100
Max
750
1.5
2.0
10
14
23
10
mV/°C
mV/°C
°C/W
Unit
Unit
mW
nA
nC
nC
mA
pF
V
V
S