NTB30N20T4 ONSEMI [ON Semiconductor], NTB30N20T4 Datasheet
NTB30N20T4
Available stocks
Related parts for NTB30N20T4
NTB30N20T4 Summary of contents
Page 1
... C 260 C L Device NTB30N20 NTB30N20T4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DSS DS(ON N− ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 Adc Temperature Coefficient (Positive) Zero Gate Voltage Collector Current ( Vdc 200 Vdc ...
Page 3
DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 ...
Page 4
Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from ...
Page 5
TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 30 ...
Page 6
SINGLE PULSE 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe ...
Page 7
−T− SEATING PLANE 0.13 (0.005) VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 0.42 10.66 *For additional information on our Pb−Free strategy and soldering details, ...
Page 8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for ...