NTD50N03R-1 ONSEMI [ON Semiconductor], NTD50N03R-1 Datasheet - Page 3

• Manufacturer Part Number: NTD50N03R-1
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

6. Switching characteristics are independent of operating junction temperatures.
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(continued) (T
Symbol
t
t
t
t
Q
V
d(on)
d(off)
d(on)
d(off)
t
R
L
L
L
RR
t
t
t
t
t
t
SD
RR
a
b
G
r
f
r
f
S
D
G
J
http://onsemi.com
= 25°C unless otherwise noted)
NTD50N03R
V
V
GS
V
V
I
GS
S
GS
GS
I
I
D
D
= 0 V, dI
= 30 A
3
= 30 A, R
= 11.5 V, V
= 30 A, R
Test Condition
= 0 V,
= 4.5 V, V
I
Ta = 25C
S
= 30 A
S
/dt = 100 A/ms,
G
G
DS
T
DS
= 3.0 W
= 3.0 W
T
J
J
= 15 V,
= 125°C
= 15 V,
= 25°C
Min
0.85
0.71
10.5
2.49
0.02
3.46
3.75
11.2
Typ
8.2
9.6
6.8
5.0
4.0
84
15
24
14
14
Max
1.1
Unit
nC
nH
ns
ns
ns
V
W