STQ1NE10L-AP STMICROELECTRONICS [STMicroelectronics], STQ1NE10L-AP Datasheet - Page 5

• Manufacturer Part Number: STQ1NE10L-AP
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STQ1NE10L
Table 5.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
SD
SD
DD
=1A, V
= 1A,
Test conditions
=30V, T
GS
J
=0
= 100°C
Electrical characteristics
Min.
Typ.
3.5
52
90
Max
1.5
1
4
Unit
nC
ns
A
A
V
A
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