STQ1NE10L-AP STMICROELECTRONICS [STMicroelectronics], STQ1NE10L-AP Datasheet - Page 3

• Manufacturer Part Number: STQ1NE10L-AP
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STQ1NE10L
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2.
3.
4. Starting T
Table 2.
Symbol
P
dv/dt
E
I
DM
V
V
TOT
Symbol
T
I
I
AS
DG
T
I
I
GS
Related to Rthj -l
I
R
DS
GS
stg
R
SD
D
D
J
(1)
(4)
thJC
thJA
T
(2)
(3)
≤ 1A, di/dt ≤ 200A/µs, V
l
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain gate current (continuous)
Gate source current (continuous)
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
J
Absolute maximum ratings
Thermal data
= 25
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
o
C, I
D
= 1A, V
DD
Parameter
≤ V
DD
C
Parameter
(BR)DSS
= 25°C
= 50V
GS
= 0)
, T
J
C
C
≤ T
=100°C
= 25°C
JMAX
-55 to 150
Value
0.025
Value
± 16
± 50
± 50
100
400
0.6
125
260
40
1
4
3
6
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
mA
mA
mJ
°C
°C
W
V
V
A
A
A
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