STQ1NE10L-AP STMICROELECTRONICS [STMicroelectronics], STQ1NE10L-AP Datasheet

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STQ1NE10L-AP

Manufacturer Part Number
STQ1NE10L-AP
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Price
Part Number:
STQ1NE10L-AP
Manufacturer:
ST
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Part Number:
STQ1NE10L-AP$V
Manufacturer:
ST
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Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
January 2007
STQ1NE10L
Exceptional high dv/dt capability
100% avalanche tested
Avalanche rugged technology
Low threshold drive
Switching application
Type
STQ1NE10L-AP
Part number
STQ1NE10L
100V
V
DSS
R
<0.4Ω
DS(on)
Q1NE10L
Q1NE10L
Marking
1A
I
D
N-channel 100V - 0.3Ω - 1A - TO-92
Rev 5
Internal schematic diagram
STripFET™ Power MOSFET
Package
TO-92
TO-92
TO-92
STQ1NE10L
(Ammopack)
Packaging
Ammopak
TO-92
Tube
www.st.com
1/13
13

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STQ1NE10L-AP Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STQ1NE10L STQ1NE10L-AP January 2007 N-channel 100V - 0.3Ω TO-92 STripFET™ Power MOSFET R I DS(on) D <0.4Ω 1A Internal schematic diagram ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STQ1NE10L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STQ1NE10L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous Drain gate current (continuous Gate source current (continuous) GS (1) I Drain current (pulsed) DM (2) P Total dissipation at T TOT ...

Page 4

... 1MHz 4.7 Ω Figure 4.7Ω Figure Figure 13 STQ1NE10L Min. Typ. Max 100 GS 10 ±100 = 250µA 1 2.5 = 0.5 A 0.30 0. 0.5 A 0.35 0.45 Min. Typ. Max. = 0.5 µ 345 = ...

Page 5

... STQ1NE10L Table 5. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STQ1NE10L ...

Page 7

... STQ1NE10L Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/13 ...

Page 8

... Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/13 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit STQ1NE10L ...

Page 9

... STQ1NE10L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... Package mechanical data DIM 10/13 TO-92 MECHANICAL DATA mm. MIN. TYP MAX. 4.32 4.95 0.36 0.51 4.45 4.95 3.30 3.94 2.41 2.67 1.14 1.40 12.70 15.49 2.16 2.41 0.92 1.52 0.41 0.56 5° STQ1NE10L inch MIN. TYP. MAX. 0.170 0.194 0.014 0.020 0.175 0.194 0.130 0.155 0.094 0.105 0.044 0.055 0.50 0.610 0.085 0.094 0.036 0.060 0.016 0.022 5° ...

Page 11

... STQ1NE10L Package mechanical data 11/13 ...

Page 12

... Revision history 5 Revision history Table 6. Revision history Date 21-Jun-2004 31-Oct-2006 31-Jan-2007 12/13 Revision 3 Complete version 4 Document has been reformatted 5 Typo mistake on Table STQ1NE10L Changes 1. ...

Page 13

... STQ1NE10L Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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