PSMN016-100YS_10 NXP [NXP Semiconductors], PSMN016-100YS_10 Datasheet - Page 7

• Manufacturer Part Number: PSMN016-100YS_10
• Description: N-channel 100 V 16.3 m? standard level MOSFET in LFPAK
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 6.
PSMN016-100YS_3
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(pF)
DSon
6000
4000
2000
C
80
60
40
20
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
5
3
…continued
10
6
Conditions
I
I
V
S
S
DS
15
= 15 A; V
= 10 A; dI
9
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= 50 V
V
003aad887
V
003aad888
GS
GS
(V)
C
C
(V)
iss
rss
GS
12
20
S
Rev. 03 — 30 March 2010
/dt = 100 A/µs; V
= 0 V; T
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
j
= 25 °C; see
Fig 6.
Fig 8.
GS
(S)
g
100
(A)
fs
I
75
50
25
D
60
40
20
0
= 0 V;
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
0
0
Figure 17
10
10
PSMN016-100YS
6
20
5
Min
-
-
-
1
4.7
30
Typ
0.8
56
131
V
© NXP B.V. 2010. All rights reserved.
40
GS
V
003aad885
003aad883
(V) =
DS
Max
1.2
-
-
I
D
(V)
(A)
4.5
4
50
2
nC
Unit
V
ns
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