as4lc4m16 Austin Semiconductor, Inc., as4lc4m16 Datasheet - Page 9

• Manufacturer Part Number: as4lc4m16
• Description: Extended Data Out Edo Dram
• Manufacturer: Austin Semiconductor, Inc.

CAPACITANCE
AC ELECTRICAL CHARACTERISTICS
(V
AS4LC4M16
Rev. 1.1 6/05
Access time from column address
Column-address setup to CAS\ precharge
Column-address hold time (referenced to RAS\)
Column-address setup time
Row-address setup time
Column address to WE\ delay time
Access time from CAS\
Column-address hold time
CAS\ pulse width
CAS\ LOW to "Don't Care" during Self Refresh
CAS\ hold time (CBR Refresh)
Last CAS\ going LOW to first CAS\ to return HIGH
CAS\ to output in Low-Z
Data output hold after CAS\ LOW
CAS\ precharge time
Access time from CAS\ precharge
CAS\ to RAS\ precharge time
CAS\ hold time
CAS\ setup time (CBR Refresh)
CAS\ to WE\ delay time
WRITE command to CAS\ lead time
Data-in hold time
Data-in setup time
Output disable
Output enable time
OE\ hold time from WE\ during
READ-MODIFY-WRITE cycle
OE\ HIGH hold time from CAS\ HIGH
OE\ HIGH pulse width
OE\ LOW to CAS\ HIGH setup time.
Output buffer turn-off delay
OE\ setup prior to RAS\ during HIDDEN REFRESH cycle
Input Capacitance: Address Pins
Input Capacitance: RAS\, CAS\, WE\, OE\
Input/Output Capacitance: DQ
CC
= +3.3V ±0.3V)
DESCRIPTION
PARAMETER
2
Austin Semiconductor, Inc.
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OEHC
t
t
CLCH
t
t
AWD
CWD
CHD
CHR
COH
CWL
t
t
t
OEH
ORD
t
ACH
t
ASC
ASR
CAC
CAH
CAS
t
CPA
CRP
CSH
CSR
t
OEP
OES
OFF
CLZ
AR
CP
DH
DS
OD
OE
AA
SYM
C
C
C
I1
I2
I0
MIN
12
38
42
15
38
28
9
0
0
8
8
8
5
0
3
8
5
5
8
8
0
0
8
5
5
4
0
0
-5
10,000
MAX
25
13
28
12
12
12
5,6,7,8,9,10,11,12
MAX
5
7
7
MIN
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15
45
49
10
10
15
10
10
45
35
10
10
10
10
0
0
5
0
3
5
5
0
0
5
5
0
0
-6
10,000
MAX
30
15
35
15
15
15
UNIT
pF
pF
pF
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17, 24, 29
30, 32
13, 33
18, 28
19, 29
19, 29
24, 25
4, 31
4, 28
28
28
18
29
28
31
29
29
31
31
31
20
25
AS4LC4M16
DRAM
DRAM
DRAM
DRAM
DRAM