emif02-600fu7 STMicroelectronics, emif02-600fu7 Datasheet - Page 4

• Manufacturer Part Number: emif02-600fu7
• Description: 10-bit Wide Filter Incudingesd Protection
• Manufacturer: STMicroelectronics

EMIF02-600FU7
ESD PROTECTION
In addition to its filtering function, the EMIF02-600FU7 is particularly optimized to perform ESD protection.
ESD protection is based on voltage clamping which can be calculated by :
This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the first stage S1 and
then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output
voltage V
Fig A3 : ESD clamping behavior
To have a good approximation of the remaining voltages at both Vin and Vout stages, we provide the typical dynamical
resistance value Rd. By taking into account these following hypothesis : R>>Rd, R
formulas:
The results of the calculation done for V
This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this
approximation the parasitic inductance effect was not taken into account. This could be few tenths of volts during few ns at
the Vin side. This parasitic effect is not present at the Vout side due the low current involved after the resistance R.
The measurements shown here after illustrate very clearly (Fig. A5a) the high efficiency of the ESD protection :
Fig A4 : Measurement conditions
4/9
out
Surge
ESD
very low.
Vg
- no influence of the parasitic inductances on Vout stage
- Vout clamping voltage very close to V
Rg
Vin
G
Vin
=8kV, R
GND
Vout
Vin
Vbr
G
Rd
V
=330 (IEC1000-4-2 standard) and V
CL
S1
Vin = 20.33 V
Vout = 7.01 V
LOW-PASS FILTER
EMIF02-600FU7
= V
Rg . Vbr Rd . Vg
R . Vbr Rd . Vin
BR
GND
BR
R
+ R
Rg
R
d
.I
PP
GND
S2
Vbr
Rd
Vout
G
Vout
>>Rd and Rload>>Rd, it gives these
Device to be protected
BR
=7V (typ.) give:
Rload