hy5ps1g831l-y6 Hynix Semiconductor, hy5ps1g831l-y6 Datasheet - Page 41

• Manufacturer Part Number: hy5ps1g831l-y6
• Description: Ddr2 Sdram - 1gb
• Manufacturer: Hynix Semiconductor

Rev 0.2 / Apr. 2004
Example 3: Burst Read Operation Followed by Precharge:
RL = 5, AL = 2, CL = 3, BL = 4, t
Example 4: Burst Read Operation Followed by Precharge:
RL = 6, AL = 2, CL = 4, BL = 4, t
CK/CK
CMD
DQS/DQS
DQ’s
CK/CK
CMD
DQS/DQS
DQ’s
Posted CAS
Post CAS
READ A
READ A
T0
T0
AL = 2
AL = 2
T1
T1
NOP
NOP
AL + BL/2 Clks
AL + BL/2 clks
T2
T2
RL =5
RL = 6
NOP
NOP
> = t
> = t
RAS
RAS
RTP
RTP
T3
T3
> = t
NOP
NOP
> = t
<= 2 clocks
<= 2 clocks
CL =3
CL =4
RTP
RTP
Precharge A
Precharge A
T4
T4
> = t
RP
T5
T5
NOP
NOP
DOUT A
> = t
CL =3
0
CL =4
RP
DOUT A
T6
1
T6
NOP
NOP
DOUT A
DOUT A
0
2
HY5PS1G431(L)F
HY5PS1G831(L)F
DOUT A
DOUT A
Activate
Activate
T7
T7
1
Bank A
3
Bank A
DOUT A
2
DOUT A
T 8
T 8
3
NOP
NOP
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