hy5ps1g831l-y6 Hynix Semiconductor, hy5ps1g831l-y6 Datasheet - Page 31

• Manufacturer Part Number: hy5ps1g831l-y6
• Description: Ddr2 Sdram - 1gb
• Manufacturer: Hynix Semiconductor

Rev 0.2 / Apr. 2004
Burst Read Operation: RL = 3 (AL = 0 and CL = 3, BL = 8)
Burst Read followed by Burst Write: RL = 5, WL = (RL-1) = 4, BL = 4
The minimum time from the burst read command to the burst write command is defined by a read-to-write-
turn-around-time, which is 4 clocks in case of BL = 4 operation, 6 clocks in case of BL = 8 operation.
CK/CK
CMD
DQS/DQS
DQ’s
CK/CK
CMD
DQS/DQS
DQs
Post CAS
T0
READ A
READ A
T0
T1
NOP
T1
NOP
RL = 3
CL =3
RL =5
Tn-1
NOP
T2
t
RTW
NOP
(Read to Write turn around time)
Tn
Post CAS
WRITE A
T3
=< t
NOP
DQSCK
DOUT A
0
Tn+1
DOUT A
NOP
DOUT A
T4
NOP
1
0
DOUT A
DOUT A
2
WL = RL - 1 = 4
Tn+2
1
DOUT A
NOP
DOUT A
T5
NOP
3
2
DOUT A
DOUT A
4
Tn+3
3
DOUT A
NOP
T6
NOP
5
DOUT A
HY5PS1G431(L)F
HY5PS1G831(L)F
6
Tn+4
DIN A
DOUT A
NOP
0
T7
NOP
7
DIN A
1
Tn+5
DIN A
NOP
T8
2
NOP
DIN A
3
33