SI4500BDY-E3 VISHAY [Vishay Siliconix], SI4500BDY-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4500BDY-E3
• Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72281
S-41428—Rev. B, 26-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
I
T
Threshold Voltage
D
J
= 250 mA
− Temperature (_C)
25
10
Single Pulse
−3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
10
100
0.1
−2
Limited
I
D(on)
125
Single Pulse
T
r
A
DS(on)
Square Wave Pulse Duration (sec)
V
= 25_C
DS
150
− Drain-to-Source Voltage (V)
Safe Operating Area
Limited
10
1
−1
BV
DSS
Limited
10
I
DM
1
Limited
80
70
60
50
40
30
20
10
0
0.001
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Single Pulse Power
DM
JM
0.1
− T
t
A
Time (sec)
1
= P
t
2
Vishay Siliconix
DM
Z
1
thJA
thJA
100
t
t
1
2
(t)
Si4500BDY
= 75_C/W
10
P-CHANNEL
www.vishay.com
600
100
600
7