SI4500BDY-E3 VISHAY [Vishay Siliconix], SI4500BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4500BDY-E3
• Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72281
S-41428—Rev. B, 26-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
25
20
15
10
5
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 9.1 A
On-Resistance vs. Drain Current
V
5
2
1
V
GS
= 10 V
V
DS
GS
Output Characteristics
= 2.5 V
Q
− Drain-to-Source Voltage (V)
g
= 5 thru 3 V
I
10
D
− Total Gate Charge (nC)
4
− Drain Current (A)
2
Gate Charge
15
6
2.5 V
3
20
8
V
GS
4
1.5 V
= 4.5 V
2 V
25
10
5
30
12
1600
1400
1200
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
0
0
−50
0.0
0
On-Resistance vs. Junction Temperature
C
−25
V
I
rss
D
GS
0.5
= 9.1 A
V
V
Transfer Characteristics
4
= 4.5 V
DS
GS
T
J
0
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
1.0
C
25_C
T
25
Capacitance
oss
C
8
= 125_C
Vishay Siliconix
1.5
C
50
iss
12
Si4500BDY
75
2.0
−55_C
N−CHANNEL
100
16
www.vishay.com
2.5
125
150
3.0
20
3