SI4500BDY-E3 VISHAY [Vishay Siliconix], SI4500BDY-E3 Datasheet

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SI4500BDY-E3

Manufacturer Part Number
SI4500BDY-E3
Description
Complementary MOSFET Half-Bridge (N- and P-Channel)
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
b.
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N Channel
N-Channel
P Channel
P-Channel
Surface Mounted on FR4 Board.
t v 10 sec
i
Complementary MOSFET Half-Bridge (N- and P-Channel)
J
Ordering Information: Si4500BDY
ti
t A bi
G
G
V
S
S
1
1
2
2
DS
Parameter
Parameter
−20
20
20
20
J
J
a, b
a, b
(V)
= 150_C)
= 150_C)
t
1
2
3
4
a
a
Si4500BDY-T1 (with Tape and Reel)
Si4500BDY—E3 (Lead (Pb)-Free)
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Top View
a, b
a, b
SO-8
0.060 @ V
0.100 @ V
0.020 @ V
0.030 @ V
a, b
r
DS(on)
8
7
6
5
Steady-State
Steady-State
GS
GS
t v 10 sec
T
T
T
T
GS
GS
A
A
A
A
(W)
= −4.5 V
= −2.5 V
= 25_C
= 70_C
= 25_C
= 70_C
= 4.5 V
= 2.5 V
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
, T
I
I
DM
I
thJA
thJF
GS
DS
D
D
S
D
D
stg
I
D
−5.3
−4.1
9.1
7.5
(A)
10 sec.
9.1
7.3
2.1
2.5
1.6
Typ
40
75
20
N-Channel
N-Channel
"12
Steady State
G
G
20
30
FEATURES
D TrenchFETr Power MOSFET
2
1
6.6
5.3
1.1
1.3
0.8
Max
50
95
22
−55 to 150
S
S
2
1
10 sec.
−5.3
−4.9
−2.1
2.5
1.6
Typ
D
41
75
23
P-Channel
P- Channel
Vishay Siliconix
"12
−20
−20
Steady State
Si4500BDY
−3.8
−3.1
−1.1
1.3
0.8
Max
50
95
26
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI4500BDY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4500BDY Si4500BDY-T1 (with Tape and Reel) Si4500BDY—E3 (Lead (Pb)-Free) Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) ...

Page 2

... Si4500BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain Source On State Resistance ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 72281 S-41428—Rev. B, 26-Jul- 1 1600 1400 1200 1000 Si4500BDY Vishay Siliconix N−CHANNEL Transfer Characteristics 125_C C 5 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 V − Gate-to-Source Voltage (V) GS ...

Page 4

... Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.3 0.6 0.9 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J www.vishay.com 4 = 25_C 1.2 1.5 75 100 125 ...

Page 5

... Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec 2 1 Si4500BDY Vishay Siliconix N−CHANNEL Notes Duty Cycle Per Unit Base = R = 75_C/W thJA ( − T ...

Page 6

... Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0. 0.12 0.08 0.04 0. − Drain Current (A) D Gate Charge 5 − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C ...

Page 7

... DS(on D(on) Limited T = 25_C A 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage (V) DS −2 − Square Wave Pulse Duration (sec) Si4500BDY Vishay Siliconix P-CHANNEL Single Pulse Power 0.001 0.01 0 Time (sec) P(t) = 0.0001 P(t) = 0.001 P(t) = 0.01 P(t) = 0 100 ...

Page 8

... Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 8 −2 − Square Wave Pulse Duration (sec) P-CHANNEL 1 10 Document Number: 72281 S-41428—Rev. B, 26-Jul-04 ...

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