SI4500BDY-E3 VISHAY [Vishay Siliconix], SI4500BDY-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4500BDY-E3
• Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72281
S-41428—Rev. B, 26-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
16
12
0.01
0.01
8
4
0
0.1
0.1
0
2
1
2
1
10
10
−4
−4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
1
V
DS
Output Characteristics
− Drain-to-Source Voltage (V)
Single Pulse
10
V
2
−3
GS
= 5 thru 3.5 V
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
−2
4
2.5 V
1.5 V
3 V
2 V
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
5
−2
10
−1
10
1
−1
20
16
12
8
4
0
0.0
0.5
V
10
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Transfer Characteristics
DM
1.0
JM
− Gate-to-Source Voltage (V)
− T
t
1
A
1
= P
1.5
t
2
DM
Vishay Siliconix
Z
thJA
100
T
thJA
2.0
t
t
C
1
2
(t)
Si4500BDY
25_C
= −55_C
= 75_C/W
N−CHANNEL
P-CHANNEL
2.5
www.vishay.com
600
10
125_C
3.0
3.5
5