IRLR/U230A FAIRCHILD [Fairchild Semiconductor], IRLR/U230A Datasheet

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IRLR/U230A

Manufacturer Part Number
IRLR/U230A
Description
Advanced Power MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10 A (Max.) @ V
Lower R
Symbol
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
DSS
AR
D
GS
AS
AR
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
: 0.335
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
from case for 5-seconds
A
C
=25 C)
=25 C)
C
C
DS
=25 C)
=100 C)
*
= 200V
*
(3)
(1)
(2)
(1)
(1)
Typ.
--
--
--
- 55 to +150
IRLR/U230A
0.38
Value
200
300
7.5
4.7
7.5
4.8
2.5
26
37
48
1
BV
R
I
20
5
1. Gate 2. Drain 3. Source
D
3
D-PAK
DS(on)
DSS
= 7.5 A
Max.
110
2.6
50
= 0.4
2
= 200 V
1
2
3
I-PAK
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
W
V
A
A
V
A
C
Rev. B
1

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IRLR/U230A Summary of contents

Page 1

... When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation = 200V DS = =100 C) C (1) (2) (1) (1) ( from case for 5-seconds Characteristic * IRLR/U230A BV = 200 V DSS R = 0.4 DS(on 7 D-PAK I-PAK Gate 2. Drain 3. Source Value Units ...

Page 2

... IRLR/U230A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 6. Gate Charge vs. Gate-Source Voltage = IRLR/U230A @ ...

Page 4

... IRLR/U230A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area ...

Page 5

... DUT DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRLR/U230A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time ...

Page 6

... IRLR/U230A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I Driver Driver ) DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...

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