SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4310BDY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 73064
S-41530—Rev. A, 16-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
100
0.1
50
10
10
1
1
0.0
0
Reverse Current vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.2
25
V
V
SD
DS
T
− Source-to-Drain Voltage (V)
= 30 V
0.4
J
50
T
= 150_C
J
− temperature (_C)
0.6
75
Limited by r
0.8
100
V
T
DS
0.01
DS(on)
100
J
0.1
10
= 25_C
= 24 V
1
0.1
1.0
125
Safe Operating Area, Junction-to-Case
1.2
150
V
New Product
DS
Single Pulse
T
− Drain-to-Source Voltage (V)
C
1
= 25_C
10
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
0.001
0
0
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
1 s
10 s
dc
2
100
0.01
V
GS
Single Pulse Power
− Gate-to-Source Voltage (V)
4
Time (sec)
I
D
= 14 A
Vishay Siliconix
0.1
6
Si4310BDY
CHANNEL-2
1
www.vishay.com
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