SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4310BDY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4310BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Input Capacitance
Input Capacitance
Output Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate-Source Charge
Gate Drain Charge
Gate-Drain Charge
Gate Resistance
Gate Resistance
Turn On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
a
Parameter
b
b
b
b
b
b
b
b
Symbol
V
V
r
r
I
I
DS(
DS(on)
t
t
t
t
I
I
C
C
GS( h)
GS(th)
I
I
V
V
C
C
D(
D(on)
C
C
Q
Q
Q
Q
d( ff)
d(off)
GSS
GSS
d(
d(on)
DSS
DSS
J
g
g
Q
Q
R
R
t
t
SD
SD
oss
t
t
t
t
i
iss
rss
rr
f
fs
gs
gd
r
f
f
g
g
d
= 25_C UNLESS OTHERWISE NOTED).
)
)
)
V
V
V
DS
V
V
DS
I
I
I
New Product
V
V
D
D
D
DS
DS
DS
DS
I
= 15 V, V
^ 1 A, V
^ 1 A, V
^ 1 A, V
F
= 15 V, V
I
F
= 30 V V
= 30 V, V
V
V
= 2.73 A, di/dt = 100 mA/ms
V
V
V
= 15 V V
= 15 V, V
V
V
V
V
V
I
V
V
V
V
V
DS
DS
V
1
= 1.8 A, di/dt = 100 A/ms
V
V
I
S
DS
DS
GS
GS
S
DS
DS
DS
DS
DD
DD
DD
GS
GS
DS
DS
= 2.73 A, V
= 1.8 A, V
= 0 V V
= 0 V, V
= V
= V
V V
= 4.5 V, I
= 5 V V
= 5 V, V
= 4.5 V, I
= 30 V V
= 30 V, V
= 15 V, R
= 15 V, R
= 15 V, R
= 10 V, I
= 15 V, I
= 15 V, I
= 10 V, I
Channel-1
Channel-1
Channel-2
Channel 2
Channel 1
Channel-1
GEN
Channel-2
Channel 2
GEN
GEN
f = 1 MHz
f = 1 MHz
Test Condition
1 V R
GS
GS
GS
GS
GS
GS
GS
GS
, I
= 4.5 V, I
= 10 V, R
= 10 V, R
= 10 V, R
I
GS
GS
= 0 V T
= 0 V, T
= 4.5 V, I
D
D
= 0 V f= 1 MHz
= 0 V, f= 1 MHz
GS
GS
GS
D
D
D
GS
GS
GS
D
D
= 250 mA
= 250 mA
D
L
L
L
= "20 V
= "20 V
= 14 A
= 10 A
= 14 A
= 15 W
= 15 W
= 15 W
= 10 V
= 10 V
= 10 A
= 8.2 A
= 13 A
= 0 V
= 0 V
= 0 V
= 0 V
1 W
V I
J
J
G
G
G
D
D
= 85_C
= 85_C
= 10 A
= 6 W
= 6 W
= 6 W
= 14 A
1 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min
1530
0.90
790
145
300
115
1.0
1.0
0.3
20
30
70
0.0065
0.0075
Typ
S-41530—Rev. A, 16-Aug-04
0.009
0.013
0.485
1580
3060
0.76
0.95
290
600
140
225
5.3
4.3
1.8
30
60
12
19
10
13
17
10
12
33
53
10
17
25
31
Document Number: 73064
5
a
0.0085
0.0095
Max
0.011
0.016
4000
2370
4590
0.53
100
100
100
435
900
210
340
3.0
3.0
1.1
2,7
1.4
15
18
30
20
26
15
20
50
80
15
26
40
50
1
Unit
nA
nA
mA
mA
pF
pF
nC
nC
ns
ns
W
W
W
W
V
V
A
A
S
S
V
V