SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4310BDY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 73064
S-41530—Rev. A, 16-Aug-04
SCHOTTKY SPECIFICATIONS (T
Forward Voltage Drop
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.016
0.012
0.008
0.004
0.000
40
35
30
25
20
15
10
5
0
0
0
Parameter
On-Resistance vs. Drain Current
5
1
V
V
DS
GS
g
Output Characteristics
− Drain-to-Source Voltage (V)
= 10 thru 5 V
I
10
D
V
GS
− Drain Current (A)
2
= 4.5 V
15
4 V
3
V
GS
20
Symbol
3 V
= 10 V
I
C
V
V
rm
rm
F
F
T
4
J
25
= 25_C UNLESS OTHERWISE NOTED)
30
5
New Product
V
I
V
Test Condition
r
F
r
= −30 V, T
= 3 A, T
= 30 V, T
V
V
I
F
r
r
= 30 V
= 15 V
= 3 A
J
J
J
= 125_C
= 75_C
= 125_C
2000
1600
1200
800
400
40
35
30
25
20
15
10
5
0
0
0.0
0
0.5
C
5
V
rss
GS
1.0
Transfer Characteristics
V
DS
− Gate-to-Source Voltage (V)
Min
1.5
10
− Drain-to-Source Voltage (V)
Capacitance
25_C
2.0
T
Vishay Siliconix
C
C
15
C
0.485
0.008
Typ
= 125_C
iss
0.42
102
oss
0.4
6.5
2.5
Si4310BDY
3.0
20
CHANNEL-1
Max
0.100
0.53
0.42
20
3.5
5
www.vishay.com
−55_C
25
4.0
Unit
mA
pF
V
V
4.5
30
3