k9f2g08uxa Samsung Semiconductor, Inc., k9f2g08uxa Datasheet - Page 11

• Manufacturer Part Number: k9f2g08uxa
• Description: 256m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2G08R0A
K9F2G08U0A
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2G08X0A-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : 1. V
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operating
Voltage on any pin relative to VSS
Temperature Under
Bias
Storage Temperature
Short Circuit Current
Supply Voltage
Supply Voltage
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Current
Maximum DC voltage on input/output pins is V
2. Typical value is measured at Vcc=3.3V, T
Parameter
Parameter
IL
Page Read with
Serial Access
Program
Erase
can undershoot to -0.4V and V
Parameter
K9F2G08X0A-XCB0
K9F2G08X0A-XIB0
K9F2G08X0A-XCB0
K9F2G08X0A-XIB0
Symbol
V
V
CC
SS
Symbol
I
OL
V
I
I
I
V
I
I
V
V
CC
CC
CC
SB
SB
I
(R/B) V
I
IH
LO
IL
OH
LI
OL
(1)
(1)
1
2
3
1
2
IH
tRC=25ns
(K9F2G08R0A: 42ns)
CE=V
CE=V
CE=V
V
V
K9F2G08R0A: I
K9F2G08U0A: I
K9F2G08R0A: I
K9F2G08U0A: I
can overshoot to V
1.65
IN
OUT
OL
Min
CC
0
=0 to Vcc(max)
=0.4V
A
+0.3V which, during transitions, may overshoot to V
=0 to Vcc(max)
Test Conditions
=25°C. Not 100% tested.
IL,
IH
CC
, WP=0V/V
:
I
-0.2, WP=0V/V
OUT
T
Symbol
A
T
T
=0 to 70°C, K9F2G08X0A-XIB0
V
V
V
I
=0mA
BIAS
STG
OS
-
-
-
-
CC
I/O
IN
1.8V
Typ.
1.8
OH=
OH
OL=
OL
0
CC
=2.1mA
=-400µA
CC
100µA
-100µA
+0.4V for durations of 20 ns or less.
(Recommended operating conditions otherwise noted.)
-0.6 to Vcc + 0.3 (< 2.45V)
CC
11
-0.6 to +2.45
-0.6 to +2.45
0.8xVcc
Vcc-0.1
Max
1.95
0
Min
-0.3
1.8V
3
-
-
-
-
-
-
1.8V
Typ
10
10
4
-
-
-
-
-
-
-
:
Min
-10 to +125
-40 to +125
-65 to +150
T
2.7
0
A
Rating
=-40 to 85°C)
Vcc+0.3 0.8xVcc
0.2xVcc
5
Max
CC
±10
±10
0.1
20
50
1
-
+2.0V for periods <20ns.
-0.6 to Vcc + 0.3 (< 4.6V)
3.3V
Typ.
FLASH MEMORY
3.3
0
-0.6 to +4.6
-0.6 to +4.6
Min
-0.3
2.4
8
-
-
-
-
-
-
3.3V
3.3V
Typ
15
10
10
-
-
-
-
-
-
-
Max
3.6
0
Vcc+0.3
0.2xVcc
Max
±10
±10
0.4
30
50
1
-
-
Unit
Unit
mA
°C
°C
V
V
V
Unit
mA
mA
µA
V