as29lv016brg-90/xt Austin Semiconductor, Inc., as29lv016brg-90/xt Datasheet - Page 38

• Manufacturer Part Number: as29lv016brg-90/xt
• Description: 16 Megabit 2m X 8-bit / 1m X 16-bit Cmos 3.0 Volt-only Boot Sector Flash Memory
• Manufacturer: Austin Semiconductor, Inc.

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.Typical program and erase times assume the following conditions: 25°C, V
2.Under worst case conditions of 90°C, V
3.The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program
4.In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5.System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 9
6.The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP, SO AND BGA PIN CAPACITANCE
AS29LV016
Rev. 2.0 06/06
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Notes:
1. Samples, not 100% tested.
2. Test conditions T
Parameter
on page 21 for further information on command definitions.
faster than the maximum program times listed.
Symbol
C
C
C
OUT
IN2
IN
Parameter
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
A
=25
Austin Semiconductor, Inc.
o
3
C, f=1.0 MHz
Byte Mode
Word Mode
CC
= 2.7 V, 1,000,000 cycles.
Test Setup
Typ
0.7
7.2
25
11
V
7
7
V
V
OUT
IN
IN
38
1
=0
=0
=0
Max
21.6
210
210
10
33
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
CC
TSOP, SO
TSOP, SO
TSOP, SO
Package
2
= 3.0 V, 100,000 cycles, checkerboard data pattern.
BOO
BOOT SECT
BOO
BOO
BOO
Unit
µs
µs
s
s
s
s
T SECT
T SECTOR FLASH
T SECT
T SECT
Excludes 00h programming
prior to erasure
Excludes system level
overhead
Typ
8.5
7.5
6
Comments
5
CO
COTS PEM
CO
CO
CO
OR FLASH
OR FLASH
OR FLASH
OR FLASH
Max
7.5
12
AS29LV016
9
4
TS PEM
TS PEM
TS PEM
TS PEM
Unit
pF
pF
pF