IDT49FCT805A IDT [Integrated Device Technology], IDT49FCT805A Datasheet - Page 3

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IDT49FCT805A

Manufacturer Part Number
IDT49FCT805A
Description
FAST CMOS BUFFER/CLOCK DRIVER
Manufacturer
IDT [Integrated Device Technology]
Datasheet

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IDT49FCT805/806/A
FAST CMOS BUFFER/CLOCK DRIVER
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
2. Input and V
3. Output and I/O terminals.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
Commercial: T
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. The test limit for this parameter is
Symbol
V
V
T
I
OUT
STG
TERM (2)
TERM (3)
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied.
extended periods may affect reliability. No terminal voltage may exceed
V
Symbol
CC
V
V
I
I
I
I
V
I
V
V
V
I
I H
I L
OZH
OZL
OS
CC
H
IH
IL
IK
OH
OL
by +0.5V unless otherwise noted.
Terminal Voltage with Respect to
GND
Terminal Voltage with Respect to
GND
Storage Temperature
DC Output Current
CC
terminals.
A
Exposure to absolute maximum rating conditions for
Input HIGH Level
Input LOW Level
Input HIGH Current
Input LOW Current
Off State (HIGH Z)
Output Current
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
Output LOW Voltage
Input Hysteresis for all inputs
Quiescent Power Supply Current
= 0 C to +70 C, V
Description
CC
= 5.0V, +25 C ambient.
Parameter
(5)
5 A at T
(5)
(5)
(5)
CC
= 5.0V
A
= –55 C.
(1)
–0.5 to +7.0
–65 to +150
–60 to +120
V
–0.5 to
CC
Max.
5%; Military: T
+0.5
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
V
V
V
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
IN
CC
CC
IN
CC
= V
= V
= Max.
= Max.
= Max.
= Min., I
= Max.
= 3V, V
= Min.
= 3V, V
= Min.
= Max., V
2574 lnk 03
IH
IH
Unit
mA
V
V
or V
or V
C
LC
(3)
IN
IN
IN
IL
9.1
, V
IL
A
Test Conditions
IN
= 0.2V; V
= –18mA
= V
= V
CAPACITANCE
NOTE:
1. This parameter is measured at characterization but not tested.
FUNCTION TABLE
NOTE:
1. H = HIGH, L = LOW, Z = High Impedance
= –55 C to +125 C, V
O
OE OE
= GND or V
Symbol
C
C
LC
LC
= GND
IN
OUT
A
,
H
H
or V
or V
L
L
OE OE
Inputs
HC
HC,
HC,
B
V
V
V
V
I
I
I
I
I
I
I
I
OH
OH
OH
OH
OH
OH
OL
OL
I
I
O
O
Input
Capacitance
Output
Capacitance
= V
= V
=
MILITARY AND COMMERCIAL TEMPERATURE RANGES
I
I
CC
IN
=
=
= 48mA MIL.
= 64mA COM'L.
OH
= -24mA MIL.
= -24mA COM'L.
OL
Parameter
= –300 A
= –12mA MIL.
= –15mA COM'L.
= 300 A
GND
V
GND
A
(1)
CC
= 300 A
CC
H
H
, IN
L
L
CC
= –32 A
– 0.2V
B
(T
OA
CC
(1)
A
n
(1)
= +25 C, f = 1.0MHz)
H
, OB
L
Z
Z
= 5.0V
49FCT805
Conditions
n
V
V
OUT
IN
Min.
–60
V
V
2.0
3.6
2.4
MON
HC
HC
= 0V
10%
= 0V
H
H
L
L
Outputs
Typ.
–120
GND
GND
–0.7
V
V
200
4.3
0.3
3.8
OA
OA
5
CC
CC
(2)
Typ.
4.5
5.5
n
,
H
L
Z
Z
49FCT806
OB
OB
V
Max.
–1.2
0.55
V
500
0.8
LC (4)
n
LC
1
1
1
1
Max. Unit
6.0
8.0
2574 lnk 04
MON
MON
2574 tbl 02
2574 tbl 05
H
H
Unit
L
L
mA
mV
V
V
V
V
V
A
A
A
A
A
pF
pF
3

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