k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet - Page 5

• Manufacturer Part Number: k6r4008v1b-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating .
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
D
Output Loads(A)
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
=0 to 70 C, V
Symbol
R
t
t
t
t
t
t
t
t
t
t
OHZ
t
OLZ
L
RC
AA
CO
OE
HZ
OH
PU
PD
LZ
= 50
30pF*
K6R4008V1B-10
Min
10
V
CC
3
0
0
0
3
0
-
-
-
-
L
=3.3 0.3V, unless otherwise noted.)
= 1.5V
- 5 -
Max
10
10
15
5
5
5
-
-
-
-
-
Output Loads(B)
for t
HZ
* Including Scope and Jig Capacitance
, t
LZ
K6R4008V1B-12
, t
Min
12
3
0
0
0
3
0
-
-
-
-
WHZ
, t
OW
D
OUT
, t
353
OLZ
Max
12
12
12
6
6
6
-
-
-
-
-
See below
& t
0V to 3V
Value
1.5V
OHZ
3ns
K6R4008V1B-15
Min
15
3
0
0
0
3
0
CMOS SRAM
-
-
-
-
PRELIMINARY
+3.3V
319
5pF*
Max
15
15
15
7
7
7
-
-
-
-
-
May 1999
Rev 2.2
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns