k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet - Page 4

• Manufacturer Part Number: k6r4008v1b-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating .
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
The above parameters are also guaranteed at industrial temperature range.
IL
IH
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
CC +
Parameter
2.0V a.c (Pulse Width
Item
(T
A
=25 C, f=1.0MHz)
8ns) for I
8ns) for I
Symbol
20mA.
V
I
V
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
Symbol
Symbol
20mA.
V
V
V
V
C
C
CC
SS
IH
IL
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
OL
OH
IN
OUT
IN
=8mA
=V
=-4mA
V
=V
CC
SS
IH
IL,
SS
(T
or OE=V
V
-0.2V or V
- 4 -
to V
IN
A
to V
=V
Test Conditions
=0 to 70 C, Vcc=3.3 0.3V, unless otherwise specified)
-0.3**
CC
Min
3.0
2.0
IH
0
CC
CC
Test Conditions
V
(T
or V
V
IH
-0.2V,
IH
I/O
IN
IN
A
or WE=V
=0V
=0V
=0 to 70 C)
IL,
0.2V
I
OUT
=0mA
IL
Typ
3.3
0
-
-
MIN
Normal
-
-
L-Ver.
10ns
12ns
15ns
V
CC
Max
3.6
+0.3***
0.8
0
CMOS SRAM
Min
2.4
Max
-2
-2
-
-
-
-
-
-
-
8
7
PRELIMINARY
Max
205
200
195
1.2
0.4
50
10
2
2
-
Unit
May 1999
V
V
V
V
Unit
pF
pF
Rev 2.2
Unit
mA
mA
mA
V
V
A
A