k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet

k6r4008v1b-c

Manufacturer Part Number

k6r4008v1b-c

Description

512kx8 Bit High Speed Static Ram 3.3v Operating .

Manufacturer

Samsung Semiconductor, Inc.

Datasheet

1.K6R4008V1B-C.pdf (10 pages)

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K6R4008V1B-C/B-L, K6R4008V1B-I/B-P

Document Title

Revision History

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

512Kx8 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Rev No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 2.1

Rev. 2.2

History

Initial release with Design Target.

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Release to Final Data Sheet.

2.1. Delete Preliminary.

2.2. Add 30pF capacitive in test load.

2.3. Relax DC characteristics.

Change operating current at Industrial Temperature range.

Add 44 pins plastic TSOP(II) forward Package.

Items

Icc

SB1

Item

(10/12/15ns part)

f=max.

205/200/195mA

Previous spec.

10ns

12ns

15ns

f=0

=3.0V

10 / 1mA

170mA

160mA

150mA

0.9mA

40mA

- 1 -

(10/12/15ns part)

Changed spec.

230/225/220mA

10 / 1.2mA

Current

205mA

200mA

195mA

1.0mA

50mA

Jan. 1st, 1997

Jun. 1st, 1997

Feb.11th.1998

Jun.27th 1998

May. 4th 1999

Draft Data

CMOS SRAM

PRELIMINARY

Design Target

Preliminary

Final

Remark

May 1999

Rev 2.2

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