k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet
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k6r4008v1b-c
Manufacturer Part Number
k6r4008v1b-c
Description
512kx8 Bit High Speed Static Ram 3.3v Operating .
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K6R4008V1B-C.pdf
(10 pages)
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Rev No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 2.1
Rev. 2.2
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Change operating current at Industrial Temperature range.
Add 44 pins plastic TSOP(II) forward Package.
Items
Icc
I
I
I
I
SB1
CC
SB
DR
Item
V
(10/12/15ns part)
DR
f=max.
205/200/195mA
Previous spec.
10ns
12ns
15ns
f=0
=3.0V
Previous
10 / 1mA
170mA
160mA
150mA
0.9mA
40mA
- 1 -
(10/12/15ns part)
Changed spec.
230/225/220mA
10 / 1.2mA
Current
205mA
200mA
195mA
1.0mA
50mA
Jan. 1st, 1997
Jun. 1st, 1997
Feb.11th.1998
Jun.27th 1998
May. 4th 1999
Draft Data
CMOS SRAM
PRELIMINARY
Design Target
Preliminary
Final
Final
Final
Remark
May 1999
Rev 2.2