k6r4008v1b-c Samsung Semiconductor, Inc., k6r4008v1b-c Datasheet - Page 2

• Manufacturer Part Number: k6r4008v1b-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating .
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
FUNCTIONAL BLOCK DIAGRAM
512K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
A
A
A
A
A
A
A
A
A
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation
• Single 3.3 0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
• Three State Outputs
• 2V Minimum Data Retention ; L-Ver. only
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
CS
WE
OE
0
1
2
3
4
5
6
7
8
Operating K6R4008V1B-10 : 205mA(Max.)
- No Clock or Refresh required
I/O
Standby (TTL)
1
~I/O
8
(CMOS) : 10mA(Max.)
K6R4008V1B-12 : 200mA(Max.)
K6R4008V1B-15 : 195mA(Max.)
K6R4008V1B-J : 36-SOJ-400
K6R4008V1B-T: 36-TSOP2-400F
K6R4008V1B-U: 44-TSOP2-400AF
Clk Gen.
Cont.
: 50mA(Max.)
Data
Gen.
CLK
1.2mA(Max.)- L-Ver.
A
9
A
10
Pre-Charge Circuit
1024x8 Columns
A
Column Select
Memory Array
11
A
512 Rows
I/O Circuit
12
A
13
A
14
A
15
A
16
A
17
A
18
- 2 -
ORDERING INFORMATION
GENERAL DESCRIPTION
The K6R4008V1B is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008V1B uses 8 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
K6R4008V1B is packaged in a 400 mil 36-pin plastic SOJ or
TSOP(II) forward or 44-pin plastic TSOP(II) forward.
PIN FUNCTION
K6R4008V1B-C10/C12/C15
K6R4008V1B-I10/I12/I15
I/O
Pin Name
A
0
1
V
WE
V
N.C
OE
CS
- A
~ I/O
CC
SS
18
8
high-speed
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+3.3V)
Ground
No Connection
system
Pin Function
Commercial Temp.
Industrial Temp.
CMOS SRAM
PRELIMINARY
applications.
May 1999
Rev 2.2
The