mtsf1p02hdr2 Freescale Semiconductor, Inc, mtsf1p02hdr2 Datasheet - Page 3

• Manufacturer Part Number: mtsf1p02hdr2
• Description: Tmos Single P-channel Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

Motorola TMOS Power MOSFET Transistor Device Data
1.6
1.2
0.8
0.4
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
0
2
0
0
– 50
0
0
V GS = 2.7 V
I D = 1.8 A
– 25
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
0.4
Gate–To–Source Voltage
T J , JUNCTION TEMPERATURE (°C)
2
0
2 V
2.7 V
V GS = 4.5 V
25
1.9 V
Temperature
0.8
50
4
1.8 V
1.5 V
1.4 V
1.6 V
1.7 V
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
75
100
6
T J = 25°C
I D = 1.8 A
1.6
T J = 25°C
125
150
2
8
1000
0.18
0.16
0.14
0.12
100
1.6
1.2
0.8
0.4
0.1
10
2
0
1
0.4
0
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
V DS ≥ 10 V
T J = 25°C
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
4
0.8
0.5
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
8
T J = 125°C
2.7 V
100°C
25°C
4.5 V
1.2
1
T J = 100°C
12
MTSF1P02HD
– 55°C
1.6
1.5
16
25°C
3
20
2
2