mtsf1p02hdr2 Freescale Semiconductor, Inc, mtsf1p02hdr2 Datasheet - Page 3
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mtsf1p02hdr2
Manufacturer Part Number
mtsf1p02hdr2
Description
Tmos Single P-channel Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MTSF1P02HDR2.pdf
(12 pages)
Motorola TMOS Power MOSFET Transistor Device Data
1.6
1.2
0.8
0.4
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
0
2
0
0
– 50
0
0
V GS = 2.7 V
I D = 1.8 A
– 25
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
0.4
Gate–To–Source Voltage
T J , JUNCTION TEMPERATURE (°C)
2
0
2 V
2.7 V
V GS = 4.5 V
25
1.9 V
Temperature
0.8
50
4
1.8 V
1.5 V
1.4 V
1.6 V
1.7 V
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
75
100
6
T J = 25°C
I D = 1.8 A
1.6
T J = 25°C
125
150
2
8
1000
0.18
0.16
0.14
0.12
100
1.6
1.2
0.8
0.4
0.1
10
2
0
1
0.4
0
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
V DS ≥ 10 V
T J = 25°C
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
4
0.8
0.5
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
8
T J = 125°C
2.7 V
100°C
25°C
4.5 V
1.2
1
T J = 100°C
12
MTSF1P02HD
– 55°C
1.6
1.5
16
25°C
3
20
2
2