mtsf1p02hdr2 Freescale Semiconductor, Inc, mtsf1p02hdr2 Datasheet

mtsf1p02hdr2

Manufacturer Part Number

mtsf1p02hdr2

Description

Tmos Single P-channel Field Effect Transistor

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MTSF1P02HDR2.pdf (12 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Advance Information

Medium Power Surface Mount Products

TMOS Single P-Channel

Field Effect Transistor

which utilize Motorola’s High Cell Density HDTMOS process to

achieve lowest possible on–resistance per silicon area. They are

capable of withstanding high energy in the avalanche and commuta-

tion modes and the drain–to–source diode has a very low reverse

recovery time. Micro8

high speed switching applications where power efficiency is important.

Typical applications are dc–dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the guesswork

in designs where inductive loads are switched and offer additional

safety margin against unexpected voltage transients.

* Negative signs for P–Channel device omitted for clarity.

(1) When mounted on 1 inch square FR–4 or G–10 board (V GS = 4.5 V, @ Steady State)

(2) When mounted on minimum recommended FR–4 or G–10 board (V GS = 4.5 V, @ Steady State)

(3) Repetitive rating; pulse width limited by maximum junction temperature.

This document contains information on a new product. Specifications and information are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International

Rectifier. Thermal Clad is a trademark of the Berquist Company.

REV 1

MAXIMUM RATINGS

THERMAL RESISTANCE

Motorola, Inc. 1996

Motorola TMOS Power MOSFET Transistor Device Data

Drain–to–Source Voltage

Drain–to–Gate Voltage (R GS = 1.0 M )

Gate–to–Source Voltage — Continuous

Drain Current — Continuous @ T A = 25 C (2)

Drain Current

Total Power Dissipation @ T A = 25 C (1)

Total Power Dissipation @ T A = 25 C (2)

Operating and Storage Temperature Range

Thermal Resistance — Junction to Ambient, PCB Mount (1)

Thermal Resistance

Micro8

Miniature Micro8 Surface Mount Package — Saves Board Space

Extremely Low Profile (<1.1mm) for thin applications such as

PCMCIA cards

Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive — Can Be Driven by Logic ICs

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

I DSS Specified at Elevated Temperature

Avalanche Energy Specified

Mounting Information for Micro8 Package Provided

Linear Derating Factor (1)

Linear Derating Factor (2)

DEVICE MARKING

devices are an advanced series of power MOSFETs

— Continuous @ T A = 70 C (2)

— Pulsed Drain Current (3)

— Junction to Ambient, PCB Mount (2)

(T J = 25 C unless otherwise noted) *

devices are designed for use in low voltage,

MTSF1P02HDR2

Rating

Device

Rating

Reel Size

ORDERING INFORMATION

12 mm embossed tape

Symbol

R JA

Tape Width



Symbol

T J , T stg

V DGR

V DSS

MTSF1P02HD

Typ.

V GS

125

I DM

Source

P D

I D

R DS(on) = 0.16 OHM

Gate

CASE 846A–02, Style 1

Motorola Preferred Device

SINGLE TMOS

1.8 AMPERES

POWER FET

– 55 to 150

20 VOLTS

Order this document

Top View

Micro8

Value

by MTSF1P02HD/D

Max.

14.4

14.3

0.78

6.25

160

1.8

1.6

1.8

8.0

4000 units

Quantity

mW/ C

Drain

Watts

Unit

Vdc

Adc

Apk

C/W

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mtsf1p02hdr2 Summary of contents

Page 1

... DEVICE MARKING AB AB MTSF1P02HDR2 This document contains information on a new product. Specifications and information are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier ...

Page 2

MTSF1P02HD ( 25°C unless otherwise noted) (1) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 4.5 V 1.8 V 2 1.7 V 1.9 V 1.2 1.6 V 0.8 1.5 V 0.4 1 0.4 0.8 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) ...

Page 4

MTSF1P02HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by ...

Page 5

TOTAL GATE CHARGE (nC) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge DRAIN–TO–SOURCE DIODE CHARACTERISTICS The switching characteristics of a ...

Page 6

MTSF1P02HD The Forward Biased Safe Operating Area curve (Figure 12) defines the maximum simultaneous drain–to–source vol- tage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 1.0E–05 1.0E–04 1.0E– Figure 15. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data P (pk ...

Page 8

MTSF1P02HD INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

Page 10

MTSF1P02HD Micro8 Dimensions are shown in millimeters (inches) 2.05 (.080) 1.95 (.077) 4.10 (.161) PIN NUMBER 1 3.90 (.154) 12.30 11.70 (.484) (.461) FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS ...

Page 11

K PIN SEATING –T– PLANE 0.038 (0.0015) H Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, ...

Page 12

MTSF1P02HD Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out ...

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