mtsf1p02hdr2 Freescale Semiconductor, Inc, mtsf1p02hdr2 Datasheet - Page 2

• Manufacturer Part Number: mtsf1p02hdr2
• Description: Tmos Single P-channel Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

(1) Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
MTSF1P02HD
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (3)
SOURCE–DRAIN DIODE CHARACTERISTICS
2
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = ± 8.0 Vdc, V DS = 0 Vdc)
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Forward Transconductance (V DS = 10 Vdc, I D = 0.9 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 16 Vdc, V GS = 0 Vdc)
(V DS = 16 Vdc, V GS = 0 Vdc, T J = 125°C)
(V DS = V GS , I D = 250 Adc)
Threshold Temperature Coefficient (Negative)
(V GS = 4.5 Vdc, I D = 1.8 Adc)
(V GS = 2.7 Vdc, I D = 0.9 Adc)
C pk =
Characteristic
Max limit – Typ
3 x SIGMA
(I S = 1.8 Adc, V GS = 0 Vdc, T J = 125°C)
(T C = 25°C unless otherwise noted) (1)
(I S = 1.8 Adc, V GS = 0 Vdc) (1)
V
V GS = 4.5 Vdc, R G = 6.0 ) (1)
V
V GS = 2.7 Vdc, R G = 6.0 ) (1)
(V DS = 10 Vdc, V GS = 0 Vdc,
(V DS = 10 Vdc, V GS = 0 Vdc,
(V
(V DS = 10 Vdc, I D = 1.8 Adc,
(V DS = 10 Vdc, I D = 1.8 Adc,
(V
(V DD = 10 Vdc, I D = 0.9 Adc,
(V DD = 10 Vdc, I D = 0.9 Adc,
(V
(V DS = 10 Vdc, I D = 1.8 Adc,
(V DS = 10 Vdc, I D = 1.8 Adc,
(I = 1.8 Adc, V
(I S = 1.8 Adc, V GS = 0 Vdc,
(I S = 1.8 Adc, V GS = 0 Vdc,
dI /dt = 100 A/ s) (1)
dI S /dt = 100 A/ s) (1)
= 4.5 Vdc, R = 6.0 ) (1)
= 2.7 Vdc, R = 6.0 ) (1)
= 10 Vdc, I = 1.8 Adc,
= 10 Vdc, I = 1.8 Adc,
= 10 Vdc, I = 0.9 Adc,
V
V GS = 4.5 Vdc)
f = 1.0 MHz)
f = 1.0 MHz)
(Cpk ≥ 2.0)
(Cpk ≥ 2.0)
= 4.5 Vdc)
= 0 Vdc,
(1) (3)
(3)
(3)
(1)
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
t rr
t a
t b
t r
t f
t r
t f
Min
0.6
2.0
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.223
12.8
1.24
Typ
120
160
440
300
150
120
0.8
2.5
4.0
0.7
5.5
3.8
0.9
—
—
—
—
15
35
55
75
20
93
50
75
11
33
87
Max
100
160
190
1.0
2.0
10
22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C
mV/°C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
m
Adc
pF
nC
ns
ns
C