upa1819 Renesas Electronics Corporation., upa1819 Datasheet - Page 5

• Manufacturer Part Number: upa1819
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

30
20
10
30
20
10
10000
0
- 0.01
0
- 0.01
1000
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
- 0.01
V
Pulsed
GS
= 4.0 V
t
d(off)
SWITCHING CHARACTERISTICS
T
T
A
- 0.1
- 0.1
A
= 125 C
= 125 C
t
I
D
f
- 0.1
75 C
25 C
25 C
75 C
25 C
25 C
- Drain Current - A
I
I
D
D
- Drain Current - A
- Drain Current - A
- 1
- 1
- 1
- 10
- 10
V
Pulsed
GS
- 10
V
V
R
t
= 10 V
d(on)
DD
GS
G
t
= 10
r
= 15 V
= 10 V
Data Sheet G16267EJ1V0DS
- 100
- 100
- 100
30
20
10
0.01
10000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
0
- 0.01
0.1
1000
10
100
1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0.4
- 0.1
V
Pulsed
GS
= 0 V
T
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
A
V
F(S-D)
= 125 C
- 0.1
DS
75 C
25°C
25°C
0.6
- Drain to Source Voltage - V
- Source to Drain Voltage - V
I
D
- Drain Current - A
- 1
- 1
0.8
- 10
- 10
V
Pulsed
GS
1
PA1819
= 4.5 V
V
f = 1.0 MHz
GS
= 0 V
C
C
C
oss
- 100
iss
rss
1.2
- 100
5