upa1819 Renesas Electronics Corporation., upa1819 Datasheet - Page 4

• Manufacturer Part Number: upa1819
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 50
- 40
- 30
- 20
- 10
- 2.4
- 2.2
- 2.0
- 1.8
- 1.6
- 1.4
30
20
10
0
-50
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
-50
0
I
Pulsed
D
Pulsed
= 6.0 A
T
V
ch
- 0.2
V
GS
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
– Channel Temperrature - C
ch
0
= 10 V
0
- Drain to Source Voltage - V
- Channel Temperature - C
- 0.4
50
V
50
GS
= 4.0 V
- 0.6
4.5 V
4.5 V
10 V
100
100
V
I
D
- 0.8
DS
= 1.0 mA
4.0 V
= 10 V
Data Sheet G16267EJ1V0DS
150
- 1
150
100
30
20
10
- 0.0001
0.1
10
0
- 0.001
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
1
- 0.01
- 0.01
- 100
0
- 0.1
- 10
- 1
V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DS
- 1
FORWARD TRANSFER CHARACTERISTICS
= 10 V
V
V
Pulsed
GS
DS
- 5
- 0.1
- Gate to Source Voltage - V
- 1.5
= 10 V
V
GS
I
D
- Gate to Source Voltage - V
- Drain Current - A
- 2
- 10
- 1
- 2.5
T
A
= 25 C
125 C
25 C
75 C
- 15
- 10
- 3
T
I
Pulsed
D
A
PA1819
= 6.0 A
= 125 C
75 C
25 C
25 C
- 3.5
- 20
- 100
- 4