upa1819 Renesas Electronics Corporation., upa1819 Datasheet
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upa1819
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upa1819 Summary of contents
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P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...
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TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 50 Pulsed 4 0.2 - 0 Drain to Source Voltage - ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed T = 125 0. Drain ...
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DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 6 Gate Charge - ...
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Data Sheet G16267EJ1V0DS PA1819 7 ...
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The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...