upa1819 Renesas Electronics Corporation., upa1819 Datasheet - Page 3

• Manufacturer Part Number: upa1819
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
- 0.01
- 100
80
60
40
20
- 0.1
- 10
0
- 1
0
- 0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
Single pulse
Mounted on ceramic
Substrate of 5000 mm
R
(V
DS(on)
25
GS
V
= 10 V)
T
DS
Limited
A
I
D(DC)
- Ambient Temperature - C
- Drain to Source Voltage - V
50
1000
100
0.1
10
- 1
1
1 m
75
I
D(pulse)
Single pulse
2
x 1.1 mm
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
- 10
125
A
= 25°C)
PW = 1 ms
150
100 ms
10 ms
DC
Data Sheet G16267EJ1V0DS
100 m
175
- 100
Mounted on FR-4 board
of 2500 mm
PW - Pulse Width - s
125 C/W
2
x 1.6 mm
Mounted on ceramic
Substrate of 5000 mm
1
62.5 C/W
2.5
1.5
0.5
2
1
0
10
0
Mounted on FR-4 board
of 2500 mm
2
x 1.1 mm
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
100
2
x 1.6 mm
50
- Ambient Temperature - C
75
Mounted on ceramic
Substrate of 5000 mm
1000
100
125
2
PA1819
x 1.1 mm
150
175
3