mt58l512v18p ETC-unknow, mt58l512v18p Datasheet - Page 18

• Manufacturer Part Number: mt58l512v18p
• Description: 512k 256k 32/36 Pipelined, Syncburst Sram
• Manufacturer: ETC-unknow

I
(0°C
+2.5V +0.4V/-0.125V for 2.5V I/O)
NOTE: 1. I
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
T
2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
3. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
4. This parameter is sampled.
A
greater output loading.
device is active (not in power-down mode).
DD
+70°C; V
is specified with no output current and increases with faster cycle times. I
DD
ADV#
ADV#
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
All inputs
or
Device selected; All inputs
Device deselected; V
Device deselected; V
Device deselected; V
V
V
= +3.3V +0.3V/-0.165V; V
Device selected; V
ADSC#, ADSP#, GW#, BWx#,
ADSC#, ADSP#, GW#, BWx#,
DD
DD
V
DD
All inputs
V
- 0.2; Cycle time
- 0.2; Cycle time
IH
V
V
= MAX; Outputs open
; Cycle time
IH
IH
CONDITIONS
; All inputs
; All inputs
V
SS
+ 0.2 or
V
IL
or
DD
DD
DD
DD
t
KC (MIN);
V
V
= MAX;
t
t
= MAX;
= MAX;
= MAX;
SS
KC (MIN)
SS
KC (MIN)
V
V
DD
IH
+ 0.2 or
+ 0.2 or
;
DD
- 0.2;
V
Q = +3.3V +0.3V/-0.165V for 3.3V I/O and
IL
SYMBOL TYP
18
PIPELINED, SCD SYNCBURST SRAM
I
I
I
I
I
DD
SB
SB
SB
DD
2
3
4
1
8Mb: 512K x 18, 256K x 32/36
225
0.4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
55
55
8
475
110
110
10
25
-6
DD
Q increases with faster cycle times and
MAX
-7.5
375
90
10
25
90
300
-10
85
10
25
85
©2002, Micron Technology, Inc.
UNITS NOTES
mA
mA
mA
mA
mA
1, 2, 3
1, 2, 3
2, 3
2, 3
2, 3