tpcf8201 TOSHIBA Semiconductor CORPORATION, tpcf8201 Datasheet - Page 6

• Manufacturer Part Number: tpcf8201
• Description: Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
1
0.1
Ta=25℃
I D max (pulse)*
*: Single pulse
Curves must be derated linearly with
increase in temperature.
Drain-source voltage V DS (V)
1000
100
Safe operating Area
10
1 m
1
1
10 ms*
10 m
10
1 ms*
V DSS max
100 m
100
Pulse width
r
th
6
– t
1
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
t w (s)
10
(4)
100
(3)
(1)
(2)
1000
TPCF8201
2007-01-16